RSQ015N06 MOSFET Transistor

The RSQ015N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSQ015N06 transistor as follows.

RSQ015N06 Transistor Specification

Transistor Code		RSQ015N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.21Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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