RSM002P03T2L MOSFET Transistor

The RSM002P03T2L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSM002P03T2L transistor as follows.

RSM002P03T2L Transistor Specification

Transistor Code		RSM002P03T2L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		VMT3
Transistor SMD Code		WP
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		4pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		2.5V

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