RSM002N06 MOSFET Transistor

The RSM002N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSM002N06 transistor as follows.

RSM002N06 Transistor Specification

Transistor Code		RSM002N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		VMT3
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.7Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		4.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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