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RSJ400N10 MOSFET Transistor

The RSJ400N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSJ400N10 transistor as follows.

Circuit diagram symbol of the RSJ400N10 transistor

RSJ400N10 Transistor Specification

Transistor Code RSJ400N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC-83
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 270pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 80nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 90nC

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