RSJ250P10 MOSFET Transistor

The RSJ250P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSJ250P10 transistor as follows.

RSJ250P10 Transistor Specification

Transistor Code		RSJ250P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		LPTS
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		67nS
Total Gate Charge		60nC

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