RSJ10HN06 MOSFET Transistor

The RSJ10HN06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSJ10HN06 transistor as follows.

RSJ10HN06 Transistor Specification

Transistor Code		RSJ10HN06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LPTS
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.003Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		2000pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		470nS

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