RSH070P05TB1 MOSFET Transistor

The RSH070P05TB1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSH070P05TB1 transistor as follows.

RSH070P05TB1 Transistor Specification

Transistor Code		RSH070P05TB1
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	45V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		510pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		34nC

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