RSD201N10FRA MOSFET Transistor

The RSD201N10FRA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD201N10FRA transistor as follows.

RSD201N10FRA Transistor Specification

Transistor Code		RSD201N10FRA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-63
Transistor SMD Code		201N10
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.046Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		55nC

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