The RSD200N10TL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the RSD200N10TL transistor as follows.
| Transistor Code | RSD200N10TL | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | CPT3 | |
| Drain-Source Voltage (Maximum) | VDS | 100V |
| Gate-Source Voltage (Maximum) | VGS | 20V |
| Drain Current (Maximum) | ID | 20A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.052Ohm |
| Power Dissipation (Maximum) | PD | 20W |
| Drain-Source Capacitance | 180pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 61nS | |
| Gate-Threshold Voltage (Maximum) | 2.5V | |
| Total Gate Charge | 48.5nC | |
UXPython is not the creator or an official representative of the RSD200N10TL MOSFET transistor. You can download the official RSD200N10TL MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
2SK2504 MOSFET Transistor
2SK2503 MOSFET Transistor
2SK2094 MOSFET Transistor
RK3055ETL MOSFET Transistor
R5205CND MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.