RSD200N10 MOSFET Transistor

The RSD200N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD200N10 transistor as follows.

RSD200N10 Transistor Specification

Transistor Code		RSD200N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		CPT3_SC63_SOT428
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.041Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		61nS

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