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RSD140P06 MOSFET Transistor

The RSD140P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD140P06 transistor as follows.

Circuit diagram symbol of the RSD140P06 transistor

RSD140P06 Transistor Specification

Transistor Code RSD140P06
Transistor Type MOSFET
Control Channel Type P-Channel
Package CPT3_SC63_SOT428
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 14A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 20W
Drain-Source Capacitance 200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 45nS
Total Gate Charge 27nC

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