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RSD131P10 MOSFET Transistor

The RSD131P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD131P10 transistor as follows.

Circuit diagram symbol of the RSD131P10 transistor

RSD131P10 Transistor Specification

Transistor Code RSD131P10
Transistor Type MOSFET
Control Channel Type P-Channel
Package SC-63
Transistor SMD Code 131P10
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 20W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 40nC

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