RSD131P10 MOSFET Transistor

The RSD131P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD131P10 transistor as follows.

RSD131P10 Transistor Specification

Transistor Code		RSD131P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-63
Transistor SMD Code		131P10
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		40nC

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