RSD080P05 MOSFET Transistor

The RSD080P05 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD080P05 transistor as follows.

RSD080P05 Transistor Specification

Transistor Code		RSD080P05
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		CPT3_SC63_SOT428
Drain-Source Voltage (Maximum)	VDS	45V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	15W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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