RSD080N06FRA MOSFET Transistor

The RSD080N06FRA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD080N06FRA transistor as follows.

RSD080N06FRA Transistor Specification

Transistor Code		RSD080N06FRA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-63
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	15W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		9.4nC

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