RSD080N06 MOSFET Transistor

The RSD080N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD080N06 transistor as follows.

RSD080N06 Transistor Specification

Transistor Code		RSD080N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		CPT3_SC63_SOT428
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.057Ohm
Power Dissipation (Maximum)	PD	15W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS

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