RSD050N06TL MOSFET Transistor

The RSD050N06TL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSD050N06TL transistor as follows.

RSD050N06TL Transistor Specification

Transistor Code		RSD050N06TL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-63
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.109Ohm
Power Dissipation (Maximum)	PD	15W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		8nC

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