RS1G180MN MOSFET Transistor

The RS1G180MN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RS1G180MN transistor as follows.

RS1G180MN Transistor Specification

Transistor Code		RS1G180MN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSOP8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		307pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.9nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		19.5nC

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