RS1E320GN MOSFET Transistor

The RS1E320GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RS1E320GN transistor as follows.

RS1E320GN Transistor Specification

Transistor Code		RS1E320GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0019Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		740pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		42.8nC

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