RS1E300GN MOSFET Transistor

The RS1E300GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RS1E300GN transistor as follows.

RS1E300GN Transistor Specification

Transistor Code		RS1E300GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0022Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		630pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		39.8nC

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