RS1E280GN MOSFET Transistor

The RS1E280GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RS1E280GN transistor as follows.

RS1E280GN Transistor Specification

Transistor Code		RS1E280GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0026Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.3nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		36nC

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