RQK0609CQDQS MOSFET Transistor

The RQK0609CQDQS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQK0609CQDQS transistor as follows.

RQK0609CQDQS Transistor Specification

Transistor Code		RQK0609CQDQS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.078Ohm
Power Dissipation (Maximum)	PD	1.5W

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