RQK0601AGDQS MOSFET Transistor

The RQK0601AGDQS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQK0601AGDQS transistor as follows.

RQK0601AGDQS Transistor Specification

Transistor Code		RQK0601AGDQS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.056Ohm
Power Dissipation (Maximum)	PD	1.5W

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