RQK0203SGDQA MOSFET Transistor

The RQK0203SGDQA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQK0203SGDQA transistor as follows.

RQK0203SGDQA Transistor Specification

Transistor Code		RQK0203SGDQA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MPAK
Transistor SMD Code		SG
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	0.8W
Drain-Source Capacitance		48pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		81nS

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