RQJ0302NGDQA MOSFET Transistor

The RQJ0302NGDQA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0302NGDQA transistor as follows.

RQJ0302NGDQA Transistor Specification

Transistor Code		RQJ0302NGDQA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MPAK
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.138Ohm
Power Dissipation (Maximum)	PD	0.8W

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