RQJ0203WGDQA MOSFET Transistor

The RQJ0203WGDQA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0203WGDQA transistor as follows.

RQJ0203WGDQA Transistor Specification

Transistor Code		RQJ0203WGDQA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MPAK
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.142Ohm
Power Dissipation (Maximum)	PD	0.8W

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