RQJ0202VGDQA MOSFET Transistor

The RQJ0202VGDQA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0202VGDQA transistor as follows.

RQJ0202VGDQA Transistor Specification

Transistor Code		RQJ0202VGDQA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MPAK
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.083Ohm
Power Dissipation (Maximum)	PD	0.8W

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