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RQA0009TXDQS MOSFET Transistor

The RQA0009TXDQS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQA0009TXDQS transistor as follows.

Circuit diagram symbol of the RQA0009TXDQS transistor

RQA0009TXDQS Transistor Specification

Transistor Code RQA0009TXDQS
Transistor Type MOSFET
Control Channel Type N-Channel
Package UPAK
Transistor SMD Code TX
Drain-Source Voltage (Maximum) VDS 16V
Gate-Source Voltage (Maximum) VGS 5V
Drain Current (Maximum) ID 3.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.46Ohm
Power Dissipation (Maximum) PD 15W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C

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