RQ7E055AT MOSFET Transistor

The RQ7E055AT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ7E055AT transistor as follows.

RQ7E055AT Transistor Specification

Transistor Code		RQ7E055AT
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT8
Transistor SMD Code		JQ
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		20.8nC

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