RQ6P015SP MOSFET Transistor

The RQ6P015SP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ6P015SP transistor as follows.

RQ6P015SP Transistor Specification

Transistor Code		RQ6P015SP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT6
Transistor SMD Code		FC
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.47Ohm
Power Dissipation (Maximum)	PD	0.6W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		17nC

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