RQ6E055BN MOSFET Transistor

The RQ6E055BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ6E055BN transistor as follows.

RQ6E055BN Transistor Specification

Transistor Code		RQ6E055BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT6
Transistor SMD Code		HH
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		58pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		8.6nC

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