RQ6E050AT MOSFET Transistor

The RQ6E050AT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ6E050AT transistor as follows.

RQ6E050AT Transistor Specification

Transistor Code		RQ6E050AT
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT6
Transistor SMD Code		VB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		20.8nC

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