RQ6C050UN MOSFET Transistor

The RQ6C050UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ6C050UN transistor as follows.

RQ6C050UN Transistor Specification

Transistor Code		RQ6C050UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT6
Transistor SMD Code		XG
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		12nC

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