RQ5L015SP MOSFET Transistor

The RQ5L015SP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ5L015SP transistor as follows.

RQ5L015SP Transistor Specification

Transistor Code		RQ5L015SP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT3
Transistor SMD Code		FA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		10nC

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