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RQ5E035BN MOSFET Transistor

The RQ5E035BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ5E035BN transistor as follows.

Circuit diagram symbol of the RQ5E035BN transistor

RQ5E035BN Transistor Specification

Transistor Code RQ5E035BN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSMT3
Transistor SMD Code ZS
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.037Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.5nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 6nC

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