RQ5E035AT MOSFET Transistor

The RQ5E035AT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ5E035AT transistor as follows.

RQ5E035AT Transistor Specification

Transistor Code		RQ5E035AT
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT3
Transistor SMD Code		JR
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		10nC

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