RQ5E030AJ MOSFET Transistor

The RQ5E030AJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ5E030AJ transistor as follows.

RQ5E030AJ Transistor Specification

Transistor Code		RQ5E030AJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT3
Transistor SMD Code		HW
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		4.5nC

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