RQ5E025AT MOSFET Transistor

The RQ5E025AT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ5E025AT transistor as follows.

RQ5E025AT Transistor Specification

Transistor Code		RQ5E025AT
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT3
Transistor SMD Code		JS
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.091Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.5nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		5.4nC

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