RQ5A030AP MOSFET Transistor

The RQ5A030AP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ5A030AP transistor as follows.

RQ5A030AP Transistor Specification

Transistor Code		RQ5A030AP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT3
Transistor SMD Code		SD
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.062Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		16nC

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