RQ3E150GN MOSFET Transistor

The RQ3E150GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ3E150GN transistor as follows.

RQ3E150GN Transistor Specification

Transistor Code		RQ3E150GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSMT8
Transistor SMD Code		E150GN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0061Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		15.3nC

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