RQ3E130MN MOSFET Transistor

The RQ3E130MN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ3E130MN transistor as follows.

RQ3E130MN Transistor Specification

Transistor Code		RQ3E130MN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSMT8
Transistor SMD Code		E130MN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0081Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		14nC

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