RQ3E100BN MOSFET Transistor

The RQ3E100BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ3E100BN transistor as follows.

RQ3E100BN Transistor Specification

Transistor Code		RQ3E100BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSMT8
Transistor SMD Code		E100BN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0104Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		22nC

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