RQ3E080GN MOSFET Transistor

The RQ3E080GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ3E080GN transistor as follows.

RQ3E080GN Transistor Specification

Transistor Code		RQ3E080GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSMT8
Transistor SMD Code		E080GN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0167Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		89pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		5.8nC

UXPython is not the creator or an official representative of the RQ3E080GN MOSFET transistor. You can download the official RQ3E080GN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

RQ3G100GN MOSFET Transistor RQ3L050GN MOSFET Transistor RQ3E130MN MOSFET Transistor RQ3E130BN MOSFET Transistor RQ3E100GN MOSFET Transistor RQ3E180GN MOSFET Transistor RQ3E120GN MOSFET Transistor RQ3E080BN MOSFET Transistor RQ3E150BN MOSFET Transistor RQ3E100MN MOSFET Transistor RQ3E120BN MOSFET Transistor RQ3E180AJ MOSFET Transistor RQ3E150MN MOSFET Transistor RQ3E100BN MOSFET Transistor RQ3E150GN MOSFET Transistor RQ3E120AT MOSFET Transistor RQ3E160AD MOSFET Transistor RQ3E070BN MOSFET Transistor