RQ3E070BN MOSFET Transistor

The RQ3E070BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ3E070BN transistor as follows.

RQ3E070BN Transistor Specification

Transistor Code		RQ3E070BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HSMT8
Transistor SMD Code		E070BN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		8.9nC

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