RQ1E100XN MOSFET Transistor

The RQ1E100XN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ1E100XN transistor as follows.

RQ1E100XN Transistor Specification

Transistor Code		RQ1E100XN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS

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