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RQ1E100XN MOSFET Transistor

The RQ1E100XN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ1E100XN transistor as follows.

Circuit diagram symbol of the RQ1E100XN transistor

RQ1E100XN Transistor Specification

Transistor Code RQ1E100XN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSMT8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0075Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 33nS

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