RQ1E050RPTR MOSFET Transistor

The RQ1E050RPTR is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ1E050RPTR transistor as follows.

RQ1E050RPTR Transistor Specification

Transistor Code		RQ1E050RPTR
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT8
Transistor SMD Code		UD
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.031Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		0.013nC

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