RQ1C065UN MOSFET Transistor

The RQ1C065UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ1C065UN transistor as follows.

RQ1C065UN Transistor Specification

Transistor Code		RQ1C065UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS

UXPython is not the creator or an official representative of the RQ1C065UN MOSFET transistor. You can download the official RQ1C065UN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

RQ1A070AP MOSFET Transistor QS8K11 MOSFET Transistor RQ1E070RP MOSFET Transistor QH8MA2 MOSFET Transistor RQ1E050RPTR MOSFET Transistor QS8M51 MOSFET Transistor QS8J13 MOSFET Transistor QS8M13 MOSFET Transistor QS8J2 MOSFET Transistor RQ1A060ZP MOSFET Transistor QS8K21 MOSFET Transistor QH8MA4 MOSFET Transistor QS8K13 MOSFET Transistor RQ1C075UN MOSFET Transistor QS8J4 MOSFET Transistor RQ1E050RP MOSFET Transistor RQ7E055AT MOSFET Transistor QS8M11 MOSFET Transistor QH8KA1 MOSFET Transistor QS8J11 MOSFET Transistor