RQ1A070AP MOSFET Transistor

The RQ1A070AP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ1A070AP transistor as follows.

RQ1A070AP Transistor Specification

Transistor Code		RQ1A070AP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		135nS
Total Gate Charge		80nC

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