RQ1A060ZP MOSFET Transistor

The RQ1A060ZP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQ1A060ZP transistor as follows.

RQ1A060ZP Transistor Specification

Transistor Code		RQ1A060ZP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		105nS
Total Gate Charge		34nC

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