RND030N20 MOSFET Transistor

The RND030N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RND030N20 transistor as follows.

RND030N20 Transistor Specification

Transistor Code		RND030N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-63
Transistor SMD Code		N03N20
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.87Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		5.2V
Total Gate Charge		6.7nC

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