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RMW200N03 MOSFET Transistor

The RMW200N03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RMW200N03 transistor as follows.

Circuit diagram symbol of the RMW200N03 transistor

RMW200N03 Transistor Specification

Transistor Code RMW200N03
Transistor Type MOSFET
Control Channel Type N-Channel
Package PSOP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.003Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 580pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS

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